SI1317DL-T1-GE3 P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay [SI1317DL-T1-GE3]; 812-3066
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 1.1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-323 (SC-70) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 270 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.45V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 4.3 nC @ 4.5 V |
| Height | 1mm |
| Width | 1.35mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -50 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 2.2mm |