SI1416EDH-T1-GE3 N-Channel MOSFET, 3.9 A, 30 V, 6-Pin SOT-363 Vishay [SI1416EDH-T1-GE3]; 919-4264
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.9 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 77 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 1.35mm |
| Height | 1mm |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V |
| Length | 2.2mm |
| Maximum Operating Temperature | +150 °C |