SI1922EDH-T1-GE3 Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay [SI1922EDH-T1-GE3]; 165-6930
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.3 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 (SC-88) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 263 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.25 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 1.6 nC @ 8 V |
| Transistor Material | Si |
| Length | 2.2mm |
| Width | 1.35mm |
| Height | 1mm |