SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay [SI2302DDS-T1-GE3]; 152-6358
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.85V |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 0.71 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Forward Diode Voltage | 1.2V |
| Length | 3.04mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 3.5 nC |
| Height | 1.02mm |
| Maximum Operating Temperature | +150 °C |