SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay [SI2308BDS-T1-GE3]; 919-0266
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 156 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.09 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 2.3 nC @ 4.5 V, 4.5 nC @ 10 V |
| Length | 3.04mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4mm |
| Transistor Material | Si |
| Height | 1.02mm |