SI3443DDV-T1-GE3 P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay [SI3443DDV-T1-GE3]; 146-4439
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSOP6 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -1.5V |
| Minimum Gate Threshold Voltage | -0.6V |
| Maximum Power Dissipation | 2.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±12 V |
| Number of Elements per Chip | 1 |
| Length | 3.1mm |
| Width | 1.7mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 20 nC |
| Height | 1mm |