SI3476DV-T1-GE3 N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay [SI3476DV-T1-GE3]; 152-6369
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.6 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 126 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Width | 1.7mm |
| Length | 3.1mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 4.9 nC |
| Maximum Operating Temperature | +150 °C |
| Height | 1mm |