SI3477DV-T1-GE3 P-Channel MOSFET, 8 A, 12 V TrenchFET, 6-Pin TSOP Vishay [SI3477DV-T1-GE3]; 165-6917
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 12 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 4.2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Width | 1.7mm |
| Series | TrenchFET |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
| Length | 3.1mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V |