Si3483DDV-T1-GE3 [Si3483DDV-T1-GE3]; 200-6783
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.333333333333333 |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSOP-6 |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 0.0312 O, 0.0513 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Number of Elements per Chip | 1 |
| Series | TrenchFET® Gen IV |