SI3499DV-T1-GE3 P-Channel MOSFET, 3.9 A, 8 V, 6-Pin TSOP Vishay [SI3499DV-T1-GE3]; 812-3173
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 3.9 A |
| Maximum Drain Source Voltage | 8 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 48 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.35V |
| Maximum Power Dissipation | 1.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -5 V, +5 V |
| Number of Elements per Chip | 1 |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 3.1mm |
| Typical Gate Charge @ Vgs | 28 nC @ 4.5 V |
| Width | 1.7mm |
| Transistor Material | Si |