SI3900DV-T1-GE3 Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin TSOP Vishay [SI3900DV-T1-GE3]; 919-4277
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.0833333333333333 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 200 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 830 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 3.1mm |
| Typical Gate Charge @ Vgs | 2.1 nC @ 4.5 V |
| Height | 1mm |
| Width | 1.7mm |
| Transistor Material | Si |