SI4116DY-T1-GE3 N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay [SI4116DY-T1-GE3]; 710-3317
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12.7 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Height | 1.55mm |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 17.5 nC @ 4.5 V, 37 nC @ 10 V |
| Width | 4mm |
| Transistor Material | Si |