Si4425FDY-T1-GE3 [Si4425FDY-T1-GE3]; 200-6797
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 18.3 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SO-8 |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 0.0095 O, 0.016 O |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Number of Elements per Chip | 1 |
| Series | TrenchFET® Gen IV |