SI4501BDY-T1-GE3 Dual N/P-Channel MOSFET, 6.4 A, 12 A, 8 V, 30 V, 8-Pin SOIC Vishay [SI4501BDY-T1-GE3]; 165-7254
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 6.4 A, 12 A |
| Maximum Drain Source Voltage | 8 V, 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ, 37 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.45V |
| Maximum Power Dissipation | 3.1 W, 4.5 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -20 V, -8 V, +8 V, +20 V |
| Number of Elements per Chip | 2 |
| Height | 1.55mm |
| Width | 4mm |
| Transistor Material | Si |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V, 27.5 nC @ 8 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |