SI4564DY-T1-GE3 Dual N/P-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay [SI4564DY-T1-GE3]; 812-3230
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 7.2 A, 8 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ, 28 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 3.1 W, 3.2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, -16 V, +16 V, +20 V |
| Number of Elements per Chip | 2 |
| Height | 1.55mm |
| Width | 4mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 20.5 nC @ 10 V, 41.5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Minimum Operating Temperature | -55 °C |