SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay [SI4900DY-T1-GE3]; 710-3364
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 58 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Height | 1.55mm |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Transistor Material | Si |
| Width | 4mm |
| Minimum Operating Temperature | -55 °C |