SI5517DU-T1-GE3 Dual N/P-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay [SI5517DU-T1-GE3]; 919-4321
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 3.7 A, 7.2 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK ChipFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 55 mΩ, 131 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 8.3 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 9.1 nC @ 8 V, 10.5 nC @ 8 V |
| Height | 0.85mm |
| Width | 1.98mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 3.08mm |