SI5935CDC-T1-GE3 Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay [SI5935CDC-T1-GE3]; 818-1352
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 3.8 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | 1206 ChipFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 156 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 7 nC @ 5 V |
| Length | 3.1mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 1.1mm |
| Width | 1.7mm |