SI5936DU-T1-GE3 Dual N-Channel MOSFET, 6 A, 30 V, 8-Pin PowerPAK ChipFET Vishay [SI5936DU-T1-GE3]; 818-1356
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK ChipFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 10.4 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 1.98mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 3.08mm |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Height | 0.85mm |
| Transistor Material | Si |