SI7121DN-T1-GE3 P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212 Vishay [SI7121DN-T1-GE3]; 170-8393
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 9.6 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 26 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 27.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 1 |
| Height | 1.07mm |
| Minimum Operating Temperature | -50 °C |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Length | 3.15mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 3.15mm |