VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 5.6A; Idm: 30A [SI7414DN-T1-E3]
Vishay MOSFET The Vishay surface mount N-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 25mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.5W and continuous drain current of 5.6A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Operating temperature ranges between -55°C and 150°C PWM optimised TrenchFET power MOSFET Applications Motor drives Primary side switches Synchronous rectifier Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 IEC 61249-2-21
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 25mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.5W and continuous drain current of 5.6A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
- Halogen free
- Operating temperature ranges between -55°C and 150°C
- PWM optimised
- TrenchFET power MOSFET
Applications
- Motor drives
- Primary side switches
- Synchronous rectifier
Certifications
- ANSI/ESD S20.20:2014
- BS EN 61340-5-1:2007
- IEC 61249-2-21