VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3A; Idm: 25A; 1.2W [SI7898DP-T1-E3]

Vishay MOSFET The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 85mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 5W and continuous drain current of 4.8A. It has a minimum and a maximum driving voltage of 6V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Halogen free Lead (Pb) free component New low thermal resistance PowerPAK package with small size and low 1.07mm profile Operating temperature ranges between -55°C and 150°C PWM optimised TrenchFET power MOSFET for fast switching Applications DC/DC power supply primary side switches Industrial motor drives Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007 Rg tested