SI7949DP-T1-E3 P-Channel MOSFET, 12.5 A, 80 V, 8-Pin PowerPAK SO Vishay [SI7949DP-T1-E3]; 165-7061
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 12.5 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | PowerPAK SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 16.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 5.2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 1.12mm |
| Minimum Operating Temperature | -55 °C |
| Width | 5.26mm |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Length | 6.25mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |