Skip to content

VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 30A; 13W [SI8406DB-T2-E1]

Mã nhà sản xuất
SI8406DB-T2-E1
Thương hiệu
Mã kho
787-9263
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI8406DB-T2-E1
Channel Type N
Maximum Continuous Drain Current 9.5A
Maximum Drain Source Voltage 25V
Package Type MICRO FOOT
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 12.4mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 2.9W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Transistor Material Si
Width 1mm
Length 1.5mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 22 nC @ 10 V
Height 0.31mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

{"one"=>"Select 2 or 3 items to compare", "other"=>"{{ count }} of 3 items selected"}

Select first item to compare

Select second item to compare

Select third item to compare

Compare