VISHAY Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -16A; Idm: -25A [SI8483DB-T2-E1]
Liên hệ
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices. Low voltage drop Low power consumption Increased battery life
The Vishay Siliconix Si8483DB series TrenchFET dual N channel power MOSFET has drain to source voltage of 12 V. It is maximum power dissipation of 13 W and mainly used in load switch in portable devices.
Low voltage drop
Low power consumption
Increased battery life