SI8487DB-T1-E1 P-Channel MOSFET, 6.2 A, 30 V TrenchFET, 4-Pin MICRO FOOT Vishay [SI8487DB-T1-E1]; 165-6343
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6.2 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | MICRO FOOT |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 45 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Series | TrenchFET |
| Height | 0.31mm |
| Width | 1.6mm |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Transistor Material | Si |
| Length | 1.6mm |