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VISHAY Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A [SI8489EDB-T2-E1]

Mã nhà sản xuất
SI8489EDB-T2-E1
Thương hiệu
Mã kho
818-1438
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SI8489EDB-T2-E1
Channel Type P
Maximum Continuous Drain Current 4.3A
Maximum Drain Source Voltage 20V
Package Type MICRO FOOT
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 82mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.5V
Maximum Power Dissipation 1.8W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Length 1mm
Width 1mm
Typical Gate Charge @ Vgs 17.5 nC @ 10 V
Transistor Material Si
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Height 0.268mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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