VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A; 0.9W [SI8802DB-T2-E1]
Liên hệ
The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop. Low on-resistance Halogen free Pb free
The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop.
Low on-resistance
Halogen free
Pb free