SI9933CDY-T1-GE3 Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC Vishay [SI9933CDY-T1-GE3]; 710-3395
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 58 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -50 °C |
| Typical Gate Charge @ Vgs | 8 nC @ 4.5 V, 17 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Height | 1.55mm |
| Length | 5mm |
| Transistor Material | Si |
| Width | 4mm |