SIA416DJ-T1-GE3 N-Channel MOSFET, 11.3 A, 100 V ThunderFET, 6-Pin PowerPAK SC-70 Vishay [SIA416DJ-T1-GE3]; 165-6297
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.3 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PowerPAK SC-70 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.6V |
| Maximum Power Dissipation | 19 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 2.15mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.75mm |
| Transistor Material | Si |
| Series | ThunderFET |
| Length | 2.15mm |
| Typical Gate Charge @ Vgs | 6.5 nC @ 10 V |