SIA445EDJ-T1-GE3 P-Channel MOSFET, 12 A, 20 V, 6-Pin PowerPAK SC-70 Vishay [SIA445EDJ-T1-GE3]; 165-6976
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK SC-70 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 19 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Height | 0.8mm |
| Width | 1.7mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 23 nC @ 4.5 V |
| Length | 1.7mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |