SIA449DJ-T1-GE3 P-Channel MOSFET, 10.4 A, 30 V TrenchFET, 6-Pin SOT-363 (SC-70) Vishay [SIA449DJ-T1-GE3]; 165-7182
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 10.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOT-363 (SC-70) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 38 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 19 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Width | 2.15mm |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Series | TrenchFET |
| Length | 2.15mm |