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VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 40A; 19W [SIA462DJ-T1-GE3]

Mã nhà sản xuất
SIA462DJ-T1-GE3
Thương hiệu
Mã kho
165-7224
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIA462DJ-T1-GE3
Channel Type N
Maximum Continuous Drain Current 12A
Maximum Drain Source Voltage 30V
Package Type SOT-363
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 22mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 19W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Typical Gate Charge @ Vgs 11 nC @ 10 V
Length 2.15mm
Transistor Material Si
Maximum Operating Temperature +150°C
Width 2.15mm
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 0.8mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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