SIA517DJ-T1-GE3 Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) Vishay [SIA517DJ-T1-GE3]; 814-1225
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.3 A, 4.5 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | SOT-363 (SC-70) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 65 mΩ, 170 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 6.5 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Height | 0.8mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 2.15mm |
| Typical Gate Charge @ Vgs | 9.7 nC @ 8 V, 13.1 nC @ 8 V |
| Width | 2.15mm |