SIA921EDJ-T1-GE3 Dual P-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay [SIA921EDJ-T1-GE3]; 814-1235
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.5 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 (SC-70) |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 98 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.5V |
| Maximum Power Dissipation | 7.8 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Height | 0.8mm |
| Maximum Operating Temperature | +150 °C |
| Length | 2.15mm |
| Width | 2.15mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |