SIB406EDK-T1-GE3 N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay [SIB406EDK-T1-GE3]; 165-7263
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SC-75 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 63 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 10 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 1.7mm |
| Height | 0.8mm |
| Typical Gate Charge @ Vgs | 7.5 nC @ 10 V |
| Length | 1.7mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |