Skip to content

VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 100A; Idm: 500A [SIDR220DP-T1-RE3]

Mã nhà sản xuất
SIDR220DP-T1-RE3
Thương hiệu
Mã kho
204-7232
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss. 100 % Rg and UIS tested TrenchFET Gen IV power MOSFET

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIDR220DP-T1-RE3
Channel Type N
Maximum Continuous Drain Current 100A
Maximum Drain Source Voltage 25V
Series SiDR220DP
Package Type PowerPAK SO-8DC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.00058Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.1V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

{"one"=>"Select 2 or 3 items to compare", "other"=>"{{ count }} of 3 items selected"}

Select first item to compare

Select second item to compare

Select third item to compare

Compare