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VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 204A; Idm: 300A [SIDR626LDP-T1-RE3]

Mã nhà sản xuất
SIDR626LDP-T1-RE3
Thương hiệu
Mã kho
210-4957
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type. TrenchFET® Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Top side cooling feature provides additional venue for thermal transfer

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8DC package type.

TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

Top side cooling feature provides additional venue for thermal transfer

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SiDR626LDP-T1-RE3
Channel Type N
Maximum Continuous Drain Current 204A
Maximum Drain Source Voltage 60V
Package Type PowerPAK SO-8DC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.0012Ω
Maximum Gate Threshold Voltage 1 → 2.5 V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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