VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A [SIDR638DP-T1-RE3]

Mã nhà sản xuất

SIDR638DP-T1-RE3

Thương hiệu

VISHAY

Mã kho

200-6840

Liên hệ

📩 Liên hệ để có giá tốt: [email protected]

The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET. TrenchFET Gen IV power MOSFET Very low RDS - Qg figure-of-merit (FOM) Tuned for the lowest RDS - Qoss FOM Top side cooling feature provides additional venue for thermal transfer 100 % Rg and UIS tested

The Vishay SIDR638DP-T1-RE3 is a N-channel 40V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

Top side cooling feature provides additional venue for thermal transfer

100 % Rg and UIS tested

THÔNG SỐ KỸ THUẬT
Manufacturer	Vishay
Manufacturer Part No.	SIDR638DP-T1-RE3
Channel Type	N
Maximum Continuous Drain Current	100A
Maximum Drain Source Voltage	40V
Series	TrenchFET® Gen IV
Package Type	PowerPAK SO-8DC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	0.00088 Ω, 0.00116 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3V
Number of Elements per Chip	1

THÔNG SỐ KỸ THUẬT

Manufacturer

Vishay

Manufacturer Part No.

SIDR638DP-T1-RE3

Channel Type

Maximum Continuous Drain Current

100A

Maximum Drain Source Voltage

40V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

0.00088 Ω, 0.00116 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

VISHAY Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A [SIDR638DP-T1-RE3]

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