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VISHAY Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W [SIHB053N60E-GE3]

Mã nhà sản xuất
SIHB053N60E-GE3
Thương hiệu
Mã kho
225-9910
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations. 4th generation E series technology Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) Reduced switching and conduction losses Avalanche energy rated (UIS)

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB053N60E-GE3
Channel Type N
Maximum Continuous Drain Current 47A
Maximum Drain Source Voltage 600V
Series E-Series
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 0.054Ω
Maximum Gate Threshold Voltage 5V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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