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SIHB22N60EF-GE3 188-4976

VISHAY Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W [SIHB22N60EF-GE3]

Mã nhà sản xuất
SIHB22N60EF-GE3
Thương hiệu
VISHAY
Mã kho
188-4976
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

EF Series Power MOSFET With Fast Body Diode. Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC)

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHB22N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 19A
Maximum Drain Source Voltage 600V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 182mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 179W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Length 10.41mm
Number of Elements per Chip 1
Width 9.65mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 48 nC @ 10 V
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C
Height 4.57mm

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