SIHB30N60E-GE3 N-Channel MOSFET, 29 A, 600 V E Series, 3-Pin D2PAK Vishay [SIHB30N60E-GE3]; 768-9310
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 29 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 125 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 4.83mm |
| Series | E Series |
| Maximum Operating Temperature | +150 °C |
| Length | 10.67mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Width | 9.65mm |