E Series Power MOSFET DPAK (TO-252) [SIHD2N80AE-GE3]; 188-4874
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.9 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.9 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 62.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Width | 6.22mm |
| Height | 2.25mm |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V |
| Forward Diode Voltage | 1.2V |
| Length | 6.73mm |