SIHD3N50D-GE3 N-Channel MOSFET, 3 A, 500 V D Series, 3-Pin DPAK Vishay [SIHD3N50D-GE3]; 145-1656
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.125 |
| Maximum Drain Source Voltage | 500 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.2 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Length | 6.73mm |
| Transistor Material | Si |
| Width | 6.22mm |
| Maximum Operating Temperature | +150 °C |
| Series | D Series |
| Height | 2.38mm |
| Typical Gate Charge @ Vgs | 6 nC @ 10 V |