SIHF640L-GE3 N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay [SIHF640L-GE3]; 165-6089
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 180 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 130 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.83mm |
| Height | 11.3mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 10.67mm |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |