SiHG28N60EF-GE3 N-Channel MOSFET, 28 A, 600 V EF Series, 3-Pin TO-247AC Vishay [SiHG28N60EF-GE3]; 903-4497
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-247AC |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 123 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 250 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Forward Diode Voltage | 1.2V |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Length | 15.87mm |
| Transistor Material | Si |
| Height | 20.82mm |
| Series | EF Series |