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VISHAY Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB [SIHP186N60EF-GE3]

Mã nhà sản xuất
SIHP186N60EF-GE3
Thương hiệu
Mã kho
200-6819
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode. 4th generation E series technology Low figure-of-merit Low effective capacitance Reduced switching and conduction losses Avalanche energy rated (UIS)

The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

THÔNG SỐ KỸ THUẬT
Manufacturer Vishay
Manufacturer Part No. SIHP186N60EF-GE3
Channel Type N
Maximum Continuous Drain Current 12 A, 18 A
Maximum Drain Source Voltage 650V
Series EF
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 0.193Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Number of Elements per Chip 1

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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