SIHP33N60E-GE3 N-Channel MOSFET, 33 A, 600 V E Series, 3-Pin TO-220AB Vishay [SIHP33N60E-GE3]; 145-1742
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 99 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 278 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 100 nC @ 10 V |
| Series | E Series |
| Maximum Operating Temperature | +150 °C |
| Length | 10.52mm |
| Height | 15.85mm |