SiA106DJ-T1-GE3 N-Channel MOSFET, 12 A, 60 V TrenchFET, 6-Pin SC-70 Vishay Siliconix [SiA106DJ-T1-GE3]; 178-3901
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SC-70 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 19 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Height | 1mm |
| Transistor Material | Si |
| Series | TrenchFET |
| Maximum Operating Temperature | +150 °C |
| Length | 2.2mm |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V |
| Width | 1.35mm |
| Minimum Operating Temperature | -55 °C |