SIRC06DP-T1-GE3 Dual N-Channel MOSFET, 60 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix [SIRC06DP-T1-GE3]; 178-3940
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SO-8 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Length | 5.99mm |
| Forward Diode Voltage | 0.7V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 38.5 nC @ 10 V |
| Series | TrenchFET |
| Height | 1.07mm |
| Maximum Operating Temperature | +150 °C |